Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship betwee...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2016-01, Vol.35 (1), p.58-71
Main Authors: Liang Shi, Kaijie Wu, Mengying Zhao, Xue, Chun Jason, Duo Liu, Sha, Edwin H.-M
Format: Article
Language:English
Subjects:
Ash
Computer aided design
Data storage
Density
Design engineering
Durability
Endurance
Error analysis
Error correction codes
Flash Lifetime
Flash memories
Flash memory (computers)
Garbage Collection
Noise
Reliability
Retention Time
Retention Time Prediction
Threshold voltage
Trimming
Wear Leveling
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Summary:NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the data lifetime, is proposed to reduce the wearing of flash memory, and hence improve the endurance of flash memory. Extensive experimental results show that the proposed technique achieves significant endurance improvements.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2015.2453369