Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

• Published in: Thin solid films 2016-01, Vol.599, p.49-53
• Main Authors: Svarnas, P., Botzakaki, M.A., Skoulatakis, G., Kennou, S., Ladas, S., Tsamis, C., Georga, S.N., Krontiras, C.A.
• Format: Article
• Language: English
• Subjects: Channels; Dielectrics; Diodes; Dioxides; Field effect transistors; Germanium oxidation; Heating; High-k dielectrics; MOS devices; Oxides; Radio frequencies; Reactive ion etcher
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2015.12.049

It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400°C. Different techniques, implementing quite complicated plasma setups, gas mixtures and substrate heating, have been used in order to grow a stable germanium oxide. In the present work a traditional “RF diode” is used for germanium oxidation by cold plasma. Following growth, X-ray photoelectron spectroscopy demonstrates that traditional capacitively driven radio frequency discharges, using molecular oxygen as sole feedstock gas, provide the possibility of germanium dioxide layer growth in a fully reproducible and controllable manner. Post treatment ex-situ analyses on day-scale periods disclose the stability of germanium oxide at room ambient conditions, offering thus the ability to grow (ex-situ) ultra-thin high-k dielectrics on top of germanium oxide layers. Atomic force microscopy excludes any morphological modification in respect to the bare germanium surface. These results suggest a simple method for a controllable and stable germanium oxide growth, and contribute to the challenge to switch to high-k dielectrics as gate insulators for high-performance metal-oxide-semiconductor field-effect transistors and to exploit in large scale the superior properties of germanium as an alternative channel material in future technology nodes. •Simple one-frequency reactive ion etcher develops GeO2 thin layers controllably.•The layers remain chemically stable at ambient conditions over day-scale periods.•The layers are unaffected by the ex-situ deposition of high-k dielectrics onto them.•GeO2 oxidation and high-k deposition don't affect the Ge morphology significantly.•These conditions contribute to improved Ge-based MOS structure fabrication