Effects of rapid thermal annealing on the morphology and optical property of ultrathin InSb film deposited on SiO sub(2)/Si substrate

Ultrathin InSb films on SiO sub(2)/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500 [degrees]C, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500 [degrees]C, which is higher than its melt...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2013-02, Vol.22 (2), p.027802-1-027802-4
Main Authors: Li, Deng-Yue, Li, Hong-Tao, Sun, He-Hui, Zhao, Lian-Cheng
Format: Article
Language:English
Subjects:
Annealing
Energy gaps (solid state)
Fourier transforms
Indium antimonides
Infrared spectroscopy
Intermetallics
Silicon dioxide
Silicon substrates
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ultrathin InSb films on SiO sub(2)/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500 [degrees]C, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500 [degrees]C, which is higher than its melting temperature (about 485 [degrees]C), shows a monocrystalline-like feature. A high-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO sub(2)/Si (111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300 [degrees]C to 500 [degrees]C, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RTA is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500 [degrees]C.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/22/2/027802