Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers

In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degree -off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14nm. Metal-oxid...

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Published in:Applied surface science 2016-02, Vol.364, p.892-895
Main Authors: Vivona, M, Fiorenza, P, Sledziewski, T, Krieger, M, Chassagne, T, Zielinski, M, Roccaforte, F
Format: Article
Language:English
Subjects:
Breakdown
Density
Devices
Electrical properties
Mechanical polishing
MOSFETs
Silicon carbide
Silicon dioxide
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container_title Applied surface science
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creator Vivona, M
Fiorenza, P
Sledziewski, T
Krieger, M
Chassagne, T
Zielinski, M
Roccaforte, F
description In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degree -off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of 11012 eV-1 cm-2 below the conduction band, a value which is comparable to the standard 4 degree -off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler-Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2 degree -off axis material for 4H-SiC MOSFET device fabrication.
doi_str_mv 10.1016/j.apsusc.2015.12.006
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1793248924</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1793248924</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_17932489243</originalsourceid><addsrcrecordid>eNqVjbsKwjAUhjMoeH0DhzO6NM2lXjqL0s2h7hLiiURiW3Na0Le3BV_A6Yfv--BnbCUFl0Ju0wc3DXVkuRJyw6XiQmxHbNqrPMm0VhM2I3oIIdV-p6esPAa0bfTWBGhi3WBsPRLUDkp_VmnpD-CrFqMzdsAVKLjhPSJCUjsH5u0JsiIZOmx8MB-MtGBjZwLh8rdztj4dL4ci6Q9eHVJ7fXqyGIKpsO7oKne5Vtk-V5n-I_0C2hlI5A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1793248924</pqid></control><display><type>article</type><title>Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers</title><source>ScienceDirect Journals</source><creator>Vivona, M ; Fiorenza, P ; Sledziewski, T ; Krieger, M ; Chassagne, T ; Zielinski, M ; Roccaforte, F</creator><creatorcontrib>Vivona, M ; Fiorenza, P ; Sledziewski, T ; Krieger, M ; Chassagne, T ; Zielinski, M ; Roccaforte, F</creatorcontrib><description>In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degree -off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of 11012 eV-1 cm-2 below the conduction band, a value which is comparable to the standard 4 degree -off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler-Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2 degree -off axis material for 4H-SiC MOSFET device fabrication.</description><identifier>ISSN: 0169-4332</identifier><identifier>DOI: 10.1016/j.apsusc.2015.12.006</identifier><language>eng</language><subject>Breakdown ; Density ; Devices ; Electrical properties ; Mechanical polishing ; MOSFETs ; Silicon carbide ; Silicon dioxide</subject><ispartof>Applied surface science, 2016-02, Vol.364, p.892-895</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Vivona, M</creatorcontrib><creatorcontrib>Fiorenza, P</creatorcontrib><creatorcontrib>Sledziewski, T</creatorcontrib><creatorcontrib>Krieger, M</creatorcontrib><creatorcontrib>Chassagne, T</creatorcontrib><creatorcontrib>Zielinski, M</creatorcontrib><creatorcontrib>Roccaforte, F</creatorcontrib><title>Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers</title><title>Applied surface science</title><description>In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degree -off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of 11012 eV-1 cm-2 below the conduction band, a value which is comparable to the standard 4 degree -off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler-Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2 degree -off axis material for 4H-SiC MOSFET device fabrication.</description><subject>Breakdown</subject><subject>Density</subject><subject>Devices</subject><subject>Electrical properties</subject><subject>Mechanical polishing</subject><subject>MOSFETs</subject><subject>Silicon carbide</subject><subject>Silicon dioxide</subject><issn>0169-4332</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVjbsKwjAUhjMoeH0DhzO6NM2lXjqL0s2h7hLiiURiW3Na0Le3BV_A6Yfv--BnbCUFl0Ju0wc3DXVkuRJyw6XiQmxHbNqrPMm0VhM2I3oIIdV-p6esPAa0bfTWBGhi3WBsPRLUDkp_VmnpD-CrFqMzdsAVKLjhPSJCUjsH5u0JsiIZOmx8MB-MtGBjZwLh8rdztj4dL4ci6Q9eHVJ7fXqyGIKpsO7oKne5Vtk-V5n-I_0C2hlI5A</recordid><startdate>20160201</startdate><enddate>20160201</enddate><creator>Vivona, M</creator><creator>Fiorenza, P</creator><creator>Sledziewski, T</creator><creator>Krieger, M</creator><creator>Chassagne, T</creator><creator>Zielinski, M</creator><creator>Roccaforte, F</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160201</creationdate><title>Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers</title><author>Vivona, M ; Fiorenza, P ; Sledziewski, T ; Krieger, M ; Chassagne, T ; Zielinski, M ; Roccaforte, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_17932489243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Breakdown</topic><topic>Density</topic><topic>Devices</topic><topic>Electrical properties</topic><topic>Mechanical polishing</topic><topic>MOSFETs</topic><topic>Silicon carbide</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vivona, M</creatorcontrib><creatorcontrib>Fiorenza, P</creatorcontrib><creatorcontrib>Sledziewski, T</creatorcontrib><creatorcontrib>Krieger, M</creatorcontrib><creatorcontrib>Chassagne, T</creatorcontrib><creatorcontrib>Zielinski, M</creatorcontrib><creatorcontrib>Roccaforte, F</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vivona, M</au><au>Fiorenza, P</au><au>Sledziewski, T</au><au>Krieger, M</au><au>Chassagne, T</au><au>Zielinski, M</au><au>Roccaforte, F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers</atitle><jtitle>Applied surface science</jtitle><date>2016-02-01</date><risdate>2016</risdate><volume>364</volume><spage>892</spage><epage>895</epage><pages>892-895</pages><issn>0169-4332</issn><abstract>In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degree -off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of 11012 eV-1 cm-2 below the conduction band, a value which is comparable to the standard 4 degree -off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler-Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2 degree -off axis material for 4H-SiC MOSFET device fabrication.</abstract><doi>10.1016/j.apsusc.2015.12.006</doi></addata></record>
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subjects Breakdown
Density
Devices
Electrical properties
Mechanical polishing
MOSFETs
Silicon carbide
Silicon dioxide
title Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T16%3A41%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20properties%20of%20SiO2/SiC%20interfaces%20on%202%20degree%20-off%20axis%204H-SiC%20epilayers&rft.jtitle=Applied%20surface%20science&rft.au=Vivona,%20M&rft.date=2016-02-01&rft.volume=364&rft.spage=892&rft.epage=895&rft.pages=892-895&rft.issn=0169-4332&rft_id=info:doi/10.1016/j.apsusc.2015.12.006&rft_dat=%3Cproquest%3E1793248924%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_17932489243%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1793248924&rft_id=info:pmid/&rfr_iscdi=true