Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for...

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Bibliographic Details
Published in:Physica Status Solidi. B: Basic Solid State Physics 2015-05, Vol.252 (5), p.1096-1103
Main Authors: Coulon, Pierre-Marie, Alloing, Blandine, Brändli, Virginie, Lefebvre, Denis, Chenot, Sébastien, Zúñiga-Pérez, Jesús
Format: Article
Language:English
Subjects:
Arrays
Flow rate
Gallium
Gallium nitrides
GaN
Homogeneity
MOVPE
Nanowires
Precursors
selective area growth
Solid state physics
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Summary:Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c‐axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201451589