Loading…
Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties
Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for...
Saved in:
Published in: | Physica Status Solidi. B: Basic Solid State Physics 2015-05, Vol.252 (5), p.1096-1103 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3 |
---|---|
cites | cdi_FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3 |
container_end_page | 1103 |
container_issue | 5 |
container_start_page | 1096 |
container_title | Physica Status Solidi. B: Basic Solid State Physics |
container_volume | 252 |
creator | Coulon, Pierre-Marie Alloing, Blandine Brändli, Virginie Lefebvre, Denis Chenot, Sébastien Zúñiga-Pérez, Jesús |
description | Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c‐axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed. |
doi_str_mv | 10.1002/pssb.201451589 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1793249053</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1793249053</sourcerecordid><originalsourceid>FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3</originalsourceid><addsrcrecordid>eNqFkU9z0zAQxTUMzBAKV846cnHQWlZkcSuZEsqUNtPw56iR5TUVOJYrKaT-MHxXFFI63DjtHt7vvdl9hLwENgfGytdjjM28ZFAJELV6RGYgSii4EvCYzBiXrAAly6fkWYzfGWMSOMzIrw32aJP7idQENPRb8Pt0Q31HV6YYfW9CXi7pYAa_d-EgCmaKtJmo9UNyw87vYtH1fk8_Xn1Zn72hpzROMeHWJGdpTLt2on6g6QYpdl1OOljfh2SH1iXnh_hX8sedjsGPGJLD-Jw86Uwf8cX9PCGf3519Wr4vLq5W58vTi8KKslIFIACDsmx5I4ySqERT12Ihy7atq7ZmVtQNsA4ZU1LavAvDFEBlQZV8UVl-Ql4dfXP07Q5j0lsXLfa9GTAfqEEqnoOY4Fk6P0pt8DEG7PQY3NaESQPThx70oQf90EMG1BHYux6n_6j1erN5-y9bHFmXX3r3wJrwQy8kl0J_vVxp-FDzNbte6mv-G0XmnUE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1793249053</pqid></control><display><type>article</type><title>Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties</title><source>Wiley</source><creator>Coulon, Pierre-Marie ; Alloing, Blandine ; Brändli, Virginie ; Lefebvre, Denis ; Chenot, Sébastien ; Zúñiga-Pérez, Jesús</creator><creatorcontrib>Coulon, Pierre-Marie ; Alloing, Blandine ; Brändli, Virginie ; Lefebvre, Denis ; Chenot, Sébastien ; Zúñiga-Pérez, Jesús</creatorcontrib><description>Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c‐axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201451589</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>Arrays ; Flow rate ; Gallium ; Gallium nitrides ; GaN ; Homogeneity ; MOVPE ; Nanowires ; Precursors ; selective area growth ; Solid state physics</subject><ispartof>Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1096-1103</ispartof><rights>2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3</citedby><cites>FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Coulon, Pierre-Marie</creatorcontrib><creatorcontrib>Alloing, Blandine</creatorcontrib><creatorcontrib>Brändli, Virginie</creatorcontrib><creatorcontrib>Lefebvre, Denis</creatorcontrib><creatorcontrib>Chenot, Sébastien</creatorcontrib><creatorcontrib>Zúñiga-Pérez, Jesús</creatorcontrib><title>Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties</title><title>Physica Status Solidi. B: Basic Solid State Physics</title><addtitle>Phys. Status Solidi B</addtitle><description>Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c‐axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.</description><subject>Arrays</subject><subject>Flow rate</subject><subject>Gallium</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Homogeneity</subject><subject>MOVPE</subject><subject>Nanowires</subject><subject>Precursors</subject><subject>selective area growth</subject><subject>Solid state physics</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkU9z0zAQxTUMzBAKV846cnHQWlZkcSuZEsqUNtPw56iR5TUVOJYrKaT-MHxXFFI63DjtHt7vvdl9hLwENgfGytdjjM28ZFAJELV6RGYgSii4EvCYzBiXrAAly6fkWYzfGWMSOMzIrw32aJP7idQENPRb8Pt0Q31HV6YYfW9CXi7pYAa_d-EgCmaKtJmo9UNyw87vYtH1fk8_Xn1Zn72hpzROMeHWJGdpTLt2on6g6QYpdl1OOljfh2SH1iXnh_hX8sedjsGPGJLD-Jw86Uwf8cX9PCGf3519Wr4vLq5W58vTi8KKslIFIACDsmx5I4ySqERT12Ihy7atq7ZmVtQNsA4ZU1LavAvDFEBlQZV8UVl-Ql4dfXP07Q5j0lsXLfa9GTAfqEEqnoOY4Fk6P0pt8DEG7PQY3NaESQPThx70oQf90EMG1BHYux6n_6j1erN5-y9bHFmXX3r3wJrwQy8kl0J_vVxp-FDzNbte6mv-G0XmnUE</recordid><startdate>201505</startdate><enddate>201505</enddate><creator>Coulon, Pierre-Marie</creator><creator>Alloing, Blandine</creator><creator>Brändli, Virginie</creator><creator>Lefebvre, Denis</creator><creator>Chenot, Sébastien</creator><creator>Zúñiga-Pérez, Jesús</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201505</creationdate><title>Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties</title><author>Coulon, Pierre-Marie ; Alloing, Blandine ; Brändli, Virginie ; Lefebvre, Denis ; Chenot, Sébastien ; Zúñiga-Pérez, Jesús</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Arrays</topic><topic>Flow rate</topic><topic>Gallium</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Homogeneity</topic><topic>MOVPE</topic><topic>Nanowires</topic><topic>Precursors</topic><topic>selective area growth</topic><topic>Solid state physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Coulon, Pierre-Marie</creatorcontrib><creatorcontrib>Alloing, Blandine</creatorcontrib><creatorcontrib>Brändli, Virginie</creatorcontrib><creatorcontrib>Lefebvre, Denis</creatorcontrib><creatorcontrib>Chenot, Sébastien</creatorcontrib><creatorcontrib>Zúñiga-Pérez, Jesús</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Coulon, Pierre-Marie</au><au>Alloing, Blandine</au><au>Brändli, Virginie</au><au>Lefebvre, Denis</au><au>Chenot, Sébastien</au><au>Zúñiga-Pérez, Jesús</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties</atitle><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2015-05</date><risdate>2015</risdate><volume>252</volume><issue>5</issue><spage>1096</spage><epage>1103</epage><pages>1096-1103</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c‐axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssb.201451589</doi><tpages>8</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0370-1972 |
ispartof | Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1096-1103 |
issn | 0370-1972 1521-3951 |
language | eng |
recordid | cdi_proquest_miscellaneous_1793249053 |
source | Wiley |
subjects | Arrays Flow rate Gallium Gallium nitrides GaN Homogeneity MOVPE Nanowires Precursors selective area growth Solid state physics |
title | Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T20%3A10%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Selective%20area%20growth%20of%20Ga-polar%20GaN%20nanowire%20arrays%20by%20continuous-flow%20MOVPE:%20A%20systematic%20study%20on%20the%20effect%20of%20growth%20conditions%20on%20the%20array%20properties&rft.jtitle=Physica%20Status%20Solidi.%20B:%20Basic%20Solid%20State%20Physics&rft.au=Coulon,%20Pierre-Marie&rft.date=2015-05&rft.volume=252&rft.issue=5&rft.spage=1096&rft.epage=1103&rft.pages=1096-1103&rft.issn=0370-1972&rft.eissn=1521-3951&rft_id=info:doi/10.1002/pssb.201451589&rft_dat=%3Cproquest_cross%3E1793249053%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c5249-1e110122d3b5a97e95b885672dd84d80c58b10fe00977c8b15a09114c192364c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1793249053&rft_id=info:pmid/&rfr_iscdi=true |