Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power metal-insulator-semiconductor-high electron mobility transistors (MISHEMTs) is reported. This is achieved by using HEMT-based deep level optical spectroscopy (DLOS) and related...

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Bibliographic Details
Published in:Microelectronics and reliability 2016-01, Vol.56, p.37-44
Main Authors: Sasikumar, A., Arehart, A.R., Cardwell, D.W., Jackson, C.M., Sun, W., Zhang, Z., Ringel, S.A.
Format: Article
Language:English
Subjects:
Buffers
Deep level optical spectroscopy (DLOS)
Deep level transient spectroscopy (DLTS)
Defects
Degradation
Dynamic on-resistance
Dynamics
Electron mobility
Gallium nitride
High electron mobility transistors (HEMTs)
High voltage
High voltages
Reliability
Signatures
Switching
Traps
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Summary:Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power metal-insulator-semiconductor-high electron mobility transistors (MISHEMTs) is reported. This is achieved by using HEMT-based deep level optical spectroscopy (DLOS) and related methods in conjunction with high voltage off-state VDS switching up to 400V. A trap with an activation energy of ~EC−2eV that is physically located in the drain-access region of the MISHEMT is shown to be the primary source of an increase of the dynamic on-resistance increase by as much as ~9 times at 400V operation. Comparisons of trap signatures extracted from the MISHEMT with capacitance-based DLOS measurements of simple Schottky-diode test-structures showing the same, dominant trap signature suggests that the physical defect is located within the GaN buffer and is not a surface or insulator-related defect. A buffer trap based model is presented to explain the observed on-resistance degradation effects in the MISHEMTs during high voltage switching. •Trap spectroscopy performed on GaN MISHEMTs during high voltage switching.•Single trap (EC−2eV) linked to on-resistance degradation during high voltage switching.•Trap spectroscopy on capacitance test structures confirmed location in GaN buffer.•Localized high-field charging of EC−2eV trap in MISHEMT degrades on-resistance.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2015.10.026