Schottky barrier height modulation at metal/n-GaN interface by BCl sub(3)/Ar plasma treatment

When n-GaN surface is treated by BCl sub(3)/Ar plasma, the Schottky barrier height (SBH) of Pt, Ni, or Ag/n-GaN is decreased, whereas that of Al/n-GaN is increased. The slope parameter is decreased by the BCl sub(3)/Ar plasma treatment, indicating that the Fermi-level pinning is strengthened and the...

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Bibliographic Details
Published in:Physica Status Solidi. B: Basic Solid State Physics 2015-05, Vol.252 (5), p.1011-1016
Main Authors: Ito, Toshihide, Nunoue, Shinya
Format: Article
Language:English
Subjects:
Aluminum
Barriers
Modulation
Pinning
Plasma (physics)
Slopes
Solid state physics
X-rays
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Summary:When n-GaN surface is treated by BCl sub(3)/Ar plasma, the Schottky barrier height (SBH) of Pt, Ni, or Ag/n-GaN is decreased, whereas that of Al/n-GaN is increased. The slope parameter is decreased by the BCl sub(3)/Ar plasma treatment, indicating that the Fermi-level pinning is strengthened and the SBH is modulated. From the secondary ion mass spectrometry and X-ray photoelectron spectroscopy measurements, it is assumed that the strong Fermi-level pinning is due to the interface states related to oxidized B.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201451577