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Synthesis of core/shell ZnO/ZnSe nanowires using novel low cost two-steps electrochemical deposition technique

This work highlights the original use of a two-step electrochemical deposition protocol to grow ZnO/ZnSe core/shell nanowires on a Sn-doped In2O3 (ITO)/glass substrate. The good alignment of the nanowires is verified by the scanning electron microscopy characterization technique in addition to the s...

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Bibliographic Details
Published in:Journal of alloys and compounds 2015-10, Vol.647, p.660-664
Main Authors: Ghoul, M., Braiek, Z., Brayek, A., Ben Assaker, I., Khalifa, N., Ben Naceur, J., Souissi, A., Lamouchi, A., Ammar, S., Chtourou, R.
Format: Article
Language:English
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Summary:This work highlights the original use of a two-step electrochemical deposition protocol to grow ZnO/ZnSe core/shell nanowires on a Sn-doped In2O3 (ITO)/glass substrate. The good alignment of the nanowires is verified by the scanning electron microscopy characterization technique in addition to the surface roughness after the ZnSe electrodeposition on the ZnO nanowires lateral facets. The X-ray diffraction patterns and Raman spectra allow estimating that ZnO has grown along the wurtzite (W) structure c-axis. The presence of the type-II interfacial transition between the valence band of ZnSe and the conduction band of ZnO was confirmed by UV–visible spectroscopy. It was proved that the absorbed energy of the developed nanostructures is extended to the near infrared which is well recommended for the photovoltaic applications. Fabrication of the ZnO–ZnSe core–shell nanowires through a solution based all-electrochemical approach, and their application as photoanodes in photoelectrochemical water splitting cells. [Display omitted] •Deposition of ZnO/ZnSe nanowires by two steps electrodeposition method.•The morphology studies show the formation of ZnO/ZnSe core/Shell nanowires.•XRD and Raman spectroscopy confirm the presence of the wurtzite ZnO and blende ZnSe junction.•Optical properties demonstrate the evidence type-II interfacial transition between the two semiconductors.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2015.06.100