A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure...

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Bibliographic Details
Published in:Chinese physics B 2013-02, Vol.22 (2), p.357-360, Article 026102
Main Author: 严启荣 闫其昂 石培培 牛巧利 李述体 章勇
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Current carriers
Gallium nitrides
Indium gallium nitrides
InGaN
Leakage current
Light-emitting diodes
Quantum wells
Spectra
应变补偿
最佳性能
蓝光发光二极管
蓝宝石衬底
蓝色发光二极管
量子阱
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Summary:A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/026102