The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current（DC） reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor（HEMT）.Experiments show that parameters degenerate under stress.Large-signal parasitic source/drain resistance（RS/RD） and gate-source forward I-V characteristics are recoverable aft...

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Bibliographic Details
Published in:Chinese physics B 2013-02, Vol.22 (2), p.411-414, Article 027201
Main Author: 石磊 冯士维 郭春生 朱慧 万宁
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Devices
Direct current
Gallium nitrides
Recovery
Semiconductor devices
Step voltage
Stresses
反向
恢复特性
步进
电压应力
直流
退化
高电子迁移率晶体管
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Summary:Direct current（DC） reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor（HEMT）.Experiments show that parameters degenerate under stress.Large-signal parasitic source/drain resistance（RS/RD） and gate-source forward I-V characteristics are recoverable after breakdown of the device under test（DUT）.Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon,and surface state recovery is the major reason for the recovery of device parameters.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/027201