Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

We demonstrate the crystallization of the microstrips of electrodeposited amorphous germanium (Ge) on graphene on insulator by rapid melting growth for the first time. Growth of single-crystalline Ge microstrips with (111) orientation was confirmed. The high level of compressive strain was found to...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2016-04, Vol.168, p.223-227
Main Authors: Morshed, Tahsin, Kai, Yuki, Matsumura, Ryo, Park, Jong-Hyeok, Chikita, Hironori, Sadoh, Taizoh, Hashim, Abdul Manaf
Format: Article
Language:English
Subjects:
Carbon nanomaterials
Crystal growth
Crystallization
Electrodeposition
Germanium
Germanium-on-insulator
Graphene
Insulators
Integrated circuits
Melting
Nucleation
Nuclei
Rapid melting growth
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate the crystallization of the microstrips of electrodeposited amorphous germanium (Ge) on graphene on insulator by rapid melting growth for the first time. Growth of single-crystalline Ge microstrips with (111) orientation was confirmed. The high level of compressive strain was found to be resulted from the intermixing of C atoms from multilayer graphene (MLG) and Ge. Probably the introduction of local C atom into Ge film enhances nucleation of Ge on MLG, which results in (111)-oriented Ge nuclei. Subsequent lateral growth enables crystallization of Ge with (111) orientation on the entire microstrip. The results also indicate that graphene is very useful to suppress the spontaneous nucleation in the melting Ge films and the lattice rotation or misorientation. This novel and innovative technique provides a breakthrough towards the realization of high quality Ge-on-insulator structures to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities. •Crystallization of a-Ge on graphene on insulator by rapid melting growth for the first time.•Growth of single-crystalline Ge microstrips with (111) orientation was confirmed.•High compressive strain was resulted from the intermixing of C atoms from graphene and Ge.•Graphene suppresses the spontaneous nucleation in the melting Ge and the lattice rotation.•Novel technique to realize Ge-on-insulator structure for ULSIs with multifunctionalities.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2016.01.056