Structural and optical properties of Zn doped CdO nanoparticles synthesized by chemical precipitation method

In this article, synthesis of undoped and zinc doped cadmium oxide with different zinc concentration (0, 2, and 5 wt%) using simple chemical precipitation method has been discussed. Influence of zinc dopant on crystal structure, microstructure and optical properties of the nanoparticles was investig...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2016-03, Vol.27 (3), p.2693-2700
Main Authors: Ravichandran, A. T., Robert Xavier, A., Pushpanathan, K., Nagabhushana, B. M., Chandramohan, R.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Dopants
Materials Science
Microstructure
Nanoparticles
Optical and Electronic Materials
Optical properties
Semiconductors
Spectrometers
Zinc
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this article, synthesis of undoped and zinc doped cadmium oxide with different zinc concentration (0, 2, and 5 wt%) using simple chemical precipitation method has been discussed. Influence of zinc dopant on crystal structure, microstructure and optical properties of the nanoparticles was investigated by means of X-ray diffractometer, field emission scanning electron microscope, ultraviolet–visible spectrometer, and photoluminescence spectrometer. Crystal structure analysis reveals that zinc doping appreciably increases the crystalline size and also it shows the polycrystalline nature of the samples. Microstructural investigation shows that the samples contain nanoparticles. Optical bandgap of the prepared samples found to vary from 2.67 to 2.61 eV for various dopant concentrations. With these specifications we can fabricate semiconductor nanocrystals and these can be used for some large scale applications of nanotechnology.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-4079-8