Asymmetric Underlap in Scaled Floating Body Cell Memories

The asymmetric underlap device for a floating body cell is proposed without any extra process or photomask during fabrication. The electric field in the gate-drain underlap region is quietly relaxed. It is found that memory operation would fail in bipolar-based floating body cells because band-to-ba...

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Bibliographic Details
Published in:Chinese physics letters 2013-06, Vol.30 (6), p.68502-1-068502-4, Article 068502
Main Authors: Wu, Qing-Qing, Chen, Jing, Luo, Jie-Xin, Lu, Kai, Chai, Zhan, Yu, Tao, Wang, Xi
Format: Article
Language:English
Subjects:
Asymmetry
Banded structure
Devices
Floating structures
Junction transistors
Photomasks
Semiconductor devices
Tunneling
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Summary:The asymmetric underlap device for a floating body cell is proposed without any extra process or photomask during fabrication. The electric field in the gate-drain underlap region is quietly relaxed. It is found that memory operation would fail in bipolar-based floating body cells because band-to-band tunneling significantly alters the body potential. Measurements show the proposed structure could indeed suppress the undesirable band-to-band tunneling greatly so that the bistable state via the parasitic bipolar junction transistor is ensured in scaled floating body cells. The parasitic capacitances in both word line and bit line are also reduced.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/6/068502