GISA XS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H sub(2) Plasma Exposure

Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H sub(2) plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the m...

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Bibliographic Details
Published in:Chinese physics letters 2012-01, Vol.29 (10), p.106801-1-106801-4
Main Authors: ZUO, Ze-Wen, CUI, Guang-Lei, WANG, Yu, WANG, Jun-Zhuan, PU, Lin, SHI, Yi
Format: Article
Language:English
Subjects:
Compressive properties
Evolution
Exposure
Insertion
Microstructure
Molecular structure
Plasma (physics)
Voids
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Summary:Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H sub(2) plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction. High-pressure H sub(2) in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film, which favours the generation of the SiH sub(n)complex in the subsurface layer of the a-Si:H film by H insertion into strained Si-Si bonds.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/10/106801