An Improvement of the Thermal Stability of SnTe through Nitrogen Doping

Nitrogen doping is applied to improve the thermal stability of SnTe. The crystallization temperature T sub(c)of SnTe is below room temperature, which can be elevated to 216[degrees]C by 7.65at.% nitrogen doping. Nitrogen doping results in the formation of SnN sub(x) in the nitrogen doped SnTe (N-SnT...

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Bibliographic Details
Published in:Chinese physics letters 2013-03, Vol.30 (3), p.37401-1-037401-4, Article 037401
Main Authors: Xia, Meng-Jiao, Rao, Feng, Song, Zhi-Tang, Ren, Kun, Wu, Liang-Cai, Liu, Bo, Feng, Song-Lin
Format: Article
Language:English
Subjects:
Crystallization
Devices
Doping
Electric potential
Formations
Thermal stability
Voltage
Voltage pulses
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Summary:Nitrogen doping is applied to improve the thermal stability of SnTe. The crystallization temperature T sub(c)of SnTe is below room temperature, which can be elevated to 216[degrees]C by 7.65at.% nitrogen doping. Nitrogen doping results in the formation of SnN sub(x) in the nitrogen doped SnTe (N-SnTe) materials, which hinders the movement of atoms and suppresses the crystallization, leading to a better thermal stability. The crystallization activation energy (E sub(a)) and data retention for ten years of 7.65at.% N-SnTe are 1.89 eV and 81[degrees]C, respectively. Moreover, the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.0 V. The good thermal stability and reversible phase-change ability have proved the potential of N-Snte for phase-change memory application.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/3/037401