Ion implantation induced blistering of rutile single crystals

The rutile single crystals were implanted by 200keV He+ ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induce...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-07, Vol.354, p.255-258
Main Authors: Xiang, Bing-Xi, Jiao, Yang, Guan, Jing, Wang, Lei
Format: Article
Language:English
Subjects:
Annealing
Backscattering
Blistering
Fluence
Ion implantation
Rutile
Single crystals
Spectrometry
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Summary:The rutile single crystals were implanted by 200keV He+ ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He+ ion implantation with appropriate fluence and the following thermal annealing.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2014.11.052