Cross sections and transport properties of positive ions in BF3 plasmas

Boron produced in plasma devices continues to be the main p-type dopant in ion implantation of semiconductor devices. Yet plasma parameters of most frequently used Boron rich gas, BF3, are not well established. Time resolved measurements of ion energy distributions in the cathode boundary [1] of a p...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2012-05, Vol.279, p.151-154
Main Authors: Stojanović, V.D., Raspopović, Z.M., Jovanović, J.V., Radovanov, S.B., Nikitović, Ž.D., Petrović, Z.Lj
Format: Article
Language:English
Subjects:
BF3
Boron
Collisions
Computer simulation
Cross section
Elastic scattering
Electric fields
Mathematical analysis
Monte Carlo
Monte Carlo methods
Non-conservative collisions
Plasma
Plasmas
Positive ions
Transport coefficients
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Summary:Boron produced in plasma devices continues to be the main p-type dopant in ion implantation of semiconductor devices. Yet plasma parameters of most frequently used Boron rich gas, BF3, are not well established. Time resolved measurements of ion energy distributions in the cathode boundary [1] of a pulsed dc plasma doping system revealed possible role of the charge-transfer collisions between singly charged ions of various mass. The cross sections for scattering of B+, BF+ and BF2+ ions on BF3 molecule are calculated by using Nanbu’s theory [2] separating elastic from reactive collisions. A Monte Carlo simulation technique was applied to perform calculations of transport parameters in DC electric fields.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2011.10.052