High quality non-rectifying contact of ITO with both Ni and n-type GaAs

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM）...

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Bibliographic Details
Published in:Journal of semiconductors 2015-05, Vol.36 (5), p.14-18
Main Author: 王青松 Masao Ikeda 谭明 代盼 吴渊渊 陆书龙 杨辉
Format: Article
Language:English
Subjects:
Contact
Contact resistance
Deposition
Electrical resistivity
Evaporation
GaAs
ITO
Nickel
Semiconductors
Transmittance
品质
整流接触
欧姆接触
比接触电阻
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Summary:We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/5/053003