Band gap and conductivity variations of ZnO thin films by doping with Aluminium

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2015-01, Vol.73 (1), p.12106
Main Authors: Vattappalam, Sunil C, Thomas, Deepu, Raju, T Mathew, Augustine, Simon, Mathew, Sunny
Format: Article
Language:English
Subjects:
Aluminium
Aluminum
Band spectra
Doping
Energy gap
Materials science
Spectrographs
Thin films
Zinc oxide
Zinc oxides
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Summary:Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-899X/73/1/012106