Electrical Instability Induced by Electron Trapping in Low-Bandgap Donor-Acceptor Polymer Field-Effect Transistors

The mechanism of electrical instability and the double slope of p‐type organic field‐effect transistors (OFETs) fabricated from low‐bandgap donor–acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of –S...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-11, Vol.27 (43), p.7004-7009
Main Authors: Phan, Hung, Wang, Ming, Bazan, Guillermo C., Nguyen, Thuc-Quyen
Format: Article
Language:English
Subjects:
Copolymers
Devices
donor-acceptor
double slopes
electron trapping
Field effect transistors
Instability
polymer field-effect transistors
Semiconductor devices
Stability
Trapping
Voltage
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Summary:The mechanism of electrical instability and the double slope of p‐type organic field‐effect transistors (OFETs) fabricated from low‐bandgap donor–acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of –SiO−. This causes a turn‐on voltage shift, hole‐mobility increase, and double‐slope occurrence. These findings tremendously impact the molecular design and device engineering of OFETs.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201501757