Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes t...

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Bibliographic Details
Published in:Journal of semiconductors 2015-12, Vol.36 (12), p.147-150
Main Author: 贾少华 刘玉岭 王辰伟 闫辰奇
Format: Article
Language:English
Subjects:
Bulging
Electrolytes
H2O2
Oxidants
Oxidizing agents
Passivation
Planarization
Semiconductors
Slurries
凹陷
动电位极化曲线
化学机械抛光
控制
氧化剂
碱性抛光液
钝化作用
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Summary:The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels offwhile the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/126002