An improved fully integrated, high-speed, dual-modulus divider

A fully integrated 2n/2n＋1 dual-modulus divider in GHz frequency range is presented. The improved structure can make all separated logic gates embed into correlative D flip-flops completely. In this way, the complex logic functions can be performed with a minimum number of devices and with maximum s...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2014-11, Vol.35 (11), p.125-129
Main Author: 孙峥 徐勇 马光彦 石会 赵斐 林莹
Format: Article
Language:English
Subjects:
Circuit design
CMOS工艺
Design standards
Devices
Dividers
D触发器
Flip-flops
Frequency ranges
Logic
Semiconductors
全集成
双模分频器
最大速度
电压电路
逻辑功能
频率范围
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A fully integrated 2n/2n＋1 dual-modulus divider in GHz frequency range is presented. The improved structure can make all separated logic gates embed into correlative D flip-flops completely. In this way, the complex logic functions can be performed with a minimum number of devices and with maximum speed, so that lower power consumption and faster speed are obtained. In addition, the low-voltage bandgap reference needed by the frequency divider is specifically designed to provide a 1.0 V output. According to the design demand, the circuit is fabricated in 0.18 μm standard CMOS process, and the measured results show that its operating frequency range is 1.1- 2.5 GHz. The dual-modulus divider dissipates 1.1 mA from a 1.8 V power supply. The temperature coefficient of the reference voltage circuit is 8.3 ppm/℃ when the temperature varies from -40 to ＋ 125 ℃. By comparison, the dual-modulus divide designed in this paper can possess better performance and flexibility.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/115005