Properties of n-type SnO sub(2) semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Transparent conducting n-type SnO sub(2) semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 [degrees]C). The structural studies reveal that the SnO2 films...

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Bibliographic Details
Published in:Journal of semiconductors 2015-12, Vol.36 (12)
Main Authors: Bendjedidi, H, Attaf, A, Saidi, H, Aida, M S, Semmari, S, Bouhdjar, A, Benkhetta, Y
Format: Article
Language:English
Subjects:
N-type semiconductors
Photovoltaic cells
Semiconductors
Solar cells
Sprayers
Sprays
Tin dioxide
Tin oxides
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Summary:Transparent conducting n-type SnO sub(2) semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 [degrees]C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 [degrees]C with preferential orientation along the (200) and (101) planes, and amorphous at 300 [degrees]C. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 x 10 super(-2)[Omega][middot]cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO sub(2) films for solar cells, sensors and opto-electronic applications.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/123002