Resistive switching and electrical control of ferromagnetism in a Ag/HfO sub(2)/Nb:SrTiO sub(3)/Ag resistive random access memory (RRAM) device at room temperature

Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO sub(2)/Nb:SrTiO sub(3)/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with a...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2016-02, Vol.28 (5)
Main Authors: Ren, Shaoqing, Zhu, Gengchang, Xie, Jihao, Bu, Jianpei, Qin, Hongwei, Hu, Jifan
Format: Article
Language:English
Subjects:
Electric potential
Ferromagnetism
Hafnium oxide
Memory devices
Multilevel
Random access memory
Silver
Switching
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Summary:Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO sub(2)/Nb:SrTiO sub(3)/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with an electron injection-trapped/detrapped process at the interface of HfO sub(2)-Nb:SrTiO sub(3). The multilevel RS transition can be observed in the reset process with larger negative voltage sweepings, which is connected to the different degree of electron detrapping in the interfacial depletion region of the HfO sub(2) layer during the reset process. The origin of the electrical control of room-temperature ferromagnetism may be connected to the change of density of oxygen vacancies in the HfO sub(2) film. The multilevel resistance states and the electric field controlled ferromagnetism have potential for applications in ultrahigh-density storage and magnetic logic device.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/28/5/056001