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Progression of metalorganic chemical vapour-deposited CdTe thin-film PV devices towards modules

This paper reports important developments achieved with CdTe thin‐film photovoltaic devices produced using metalorganic chemical vapour deposition at atmospheric pressure. In particular, attention was paid to understand the enhancements in solar cell conversion efficiency, to develop the cell design...

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Published in:Progress in photovoltaics 2016-03, Vol.24 (3), p.283-291
Main Authors: Kartopu, Giray, Phillips, Laurie J., Barrioz, Vincent, Irvine, Stuart J. C., Hodgson, Simon D., Tejedor, Eva, Dupin, David, Clayton, Andrew J., Rugen-Hankey, Sarah L., Durose, Ken
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cited_by cdi_FETCH-LOGICAL-c4348-3c63eca2ce44aec9e2dcecb77640ac8b27be84ac0e08a951d9e4035be752a3983
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container_title Progress in photovoltaics
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creator Kartopu, Giray
Phillips, Laurie J.
Barrioz, Vincent
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Hodgson, Simon D.
Tejedor, Eva
Dupin, David
Clayton, Andrew J.
Rugen-Hankey, Sarah L.
Durose, Ken
description This paper reports important developments achieved with CdTe thin‐film photovoltaic devices produced using metalorganic chemical vapour deposition at atmospheric pressure. In particular, attention was paid to understand the enhancements in solar cell conversion efficiency, to develop the cell design, and assess scalability towards modules. Improvements in the device performance were achieved by optimising the high‐transparency window layer (Cd0.3Zn0.7S) and a device‐activation anneal. These increased the fill factor and open‐circuit voltage to 77 ± 1% and 785 ± 7 mV, respectively, compared with 69 ± 3% and 710 ± 10 mV for previous baseline devices with no anneal and thicker Cd0.3Zn0.7S. The enhancement in these parameters is associated with the two fold to three fold increase in the net acceptor density of CdTe upon air annealing and a decrease in the back contact barrier height from 0.24 ± 0.01 to 0.16 ± 0.02 eV. The optimum thickness of the window layer for maximum photocurrent was 150 nm. The cell size was scaled from 0.25 to 2 cm2 in order to assess its impact on the device series resistance and fill factor. Finally, micro‐module devices utilising series‐connected 2‐cm2 sub‐cells were fabricated using a combination of laser and mechanical scribing techniques. An initial module‐to‐cell efficiency ratio of 0.9 was demonstrated for a six‐cell module with the use of the improved device structure and processing. Prospects for CdTe photovoltaic modules grown by metalorganic chemical vapour deposition are commented on. Copyright © 2015 John Wiley & Sons, Ltd. Recent progress made with metalorganic chemical vapour deposition (MOCVD) CdTe thin‐film photovoltaic devices is reported. Carrier concentration in CdTe rises by up to threefold, and back contact barrier height reduces after air anneal, boosting the open‐circuit potential and fill factor. Optimisation led to a new best efficiency for MOCVD solar cells. First MOCVD CdTe micro‐module devices are reported and scale‐up issues are discussed.
doi_str_mv 10.1002/pip.2668
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subjects Annealing
Cadmium tellurides
CdTe thin-film PV
Chemical vapor deposition
Devices
micro-module
MOCVD
Modules
Optimization
Photovoltaic cells
Solar cells
Thin films
title Progression of metalorganic chemical vapour-deposited CdTe thin-film PV devices towards modules
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