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Power diamond vertical Schottky barrier diode with 10 A forward current

We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2 × 1017 cm−3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-11, Vol.212 (11), p.2621-2627
Main Authors: Tarelkin, Sergey, Bormashov, Vitaly, Buga, Sergei, Volkov, Alexander, Teteruk, Dmitry, Kornilov, Nikolay, Kuznetsov, Mikhail, Terentiev, Sergey, Golovanov, Anton, Blank, Vladimir
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Language:English
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Summary:We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2 × 1017 cm−3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °C. The self‐heating effect further improves the diode forward characteristics. We tested different crystal‐to‐case thermal interfaces. Diodes have less than 3.5 V forward voltage drop for 10 A at 25 °C and less than 1 V at 200 °C with the on‐resistance as low as 0.05 Ω (10 mΩ cm2). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200 MW/cm2 can be made for diamond drift layer with the blocking field of 2 MV/cm and as high as 18000 MW/cm2 in the case of EMAX ∼8 MV/cm.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201532213