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Power diamond vertical Schottky barrier diode with 10 A forward current
We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2 × 1017 cm−3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °...
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Published in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2015-11, Vol.212 (11), p.2621-2627 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2 × 1017 cm−3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °C. The self‐heating effect further improves the diode forward characteristics. We tested different crystal‐to‐case thermal interfaces. Diodes have less than 3.5 V forward voltage drop for 10 A at 25 °C and less than 1 V at 200 °C with the on‐resistance as low as 0.05 Ω (10 mΩ cm2). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200 MW/cm2 can be made for diamond drift layer with the blocking field of 2 MV/cm and as high as 18000 MW/cm2 in the case of EMAX ∼8 MV/cm. |
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ISSN: | 1862-6300 1862-6319 |
DOI: | 10.1002/pssa.201532213 |