Direct Measurement of the Electrical Abruptness of a Nanowire p–n Junction

Electrostatic potential maps of GaAs nanowire, p–n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, and secondary electron emission microscopy using scanning electron microscopy. The built-in potential and depletion length of an a...

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Bibliographic Details
Published in:Nano letters 2016-07, Vol.16 (7), p.3982-3988
Main Authors: Darbandi, Ali, McNeil, James C, Akhtari-Zavareh, Azadeh, Watkins, Simon P, Kavanagh, Karen L
Format: Article
Language:English
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Summary:Electrostatic potential maps of GaAs nanowire, p–n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, and secondary electron emission microscopy using scanning electron microscopy. The built-in potential and depletion length of an axial junction was found to be 1.5 ± 0.1 V and 74 ± 9 nm, respectively, to be compared with 1.53 V and 64 nm of an abrupt junction of the same end point carrier concentrations. Associated with the switch from Te to Zn dopant precursor was a reduction in GaAs nanowire diameter 3 ± 1 nm that occurred prior to the junction center (n = p) and was followed by a rapid increase in Zn doping. The delay in Zn incorporation is attributed to the time required for Zn to equilibrate within the Au catalyst.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.6b00289