Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires

We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo Si thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illu...

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Published in:Optics express 2016-06, Vol.24 (13), p.13931-13938
Main Authors: Li, Jian, Kirkwood, Robert A, Baker, Luke J, Bosworth, David, Erotokritou, Kleanthis, Banerjee, Archan, Heath, Robert M, Natarajan, Chandra M, Barber, Zoe H, Sorel, Marc, Hadfield, Robert H
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cited_by cdi_FETCH-LOGICAL-c329t-bb4a349f717268ebe1bcc84e9a309f5d85a210318d1d28036e2bb0a6e49b83013
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container_end_page 13938
container_issue 13
container_start_page 13931
container_title Optics express
container_volume 24
creator Li, Jian
Kirkwood, Robert A
Baker, Luke J
Bosworth, David
Erotokritou, Kleanthis
Banerjee, Archan
Heath, Robert M
Natarajan, Chandra M
Barber, Zoe H
Sorel, Marc
Hadfield, Robert H
description We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo Si thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of approximately 5% at 1550 nm wavelength. Under these conditions 10 Hz dark count rate and 51 ps full width at half maximum (FWHM) timing jitter is observed.
doi_str_mv 10.1364/OE.24.013931
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title Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires
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