Loading…

Optimized SESAMs for kilowatt-level ultrafast lasers

We present a thorough investigation of surface deformation and thermal properties of high-damage threshold large-area semiconductor saturable absorber mirrors (SESAMs) designed for kilowatt average power laser oscillators. We compare temperature rise, thermal lensing, and surface deformation of stan...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2016-05, Vol.24 (10), p.10512-10526
Main Authors: Diebold, A, Zengerle, T, Alfieri, C G E, Schriber, C, Emaury, F, Mangold, M, Hoffmann, M, Saraceno, C J, Golling, M, Follman, D, Cole, G D, Aspelmeyer, M, Südmeyer, T, Keller, U
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a thorough investigation of surface deformation and thermal properties of high-damage threshold large-area semiconductor saturable absorber mirrors (SESAMs) designed for kilowatt average power laser oscillators. We compare temperature rise, thermal lensing, and surface deformation of standard SESAM samples and substrate-removed SESAMs contacted using different techniques. We demonstrate that for all cases the thermal effects scale linearly with the absorbed power, but the contacting technique critically affects the strength of the temperature rise and the thermal lens of the SESAMs (i.e. the slope of the linear change). Our best SESAMs are fabricated using a novel substrate-transfer direct bonding technique and show excellent surface flatness (with non-measureable radii of curvature (ROC), compared to astigmatic ROCs of up to 10 m for standard SESAMs), order-of-magnitude improved heat removal, and negligible deformation with absorbed power. This is achieved without altering the saturation behavior or the recovery parameters of the samples. These SESAMs will be a key enabling component for the next generation of kilowatt-level ultrafast oscillators.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.24.010512