Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO sub(2)/4H-SiC(0001) and (0001)

The effects of oxynitridation and wet oxidation at the interface of SiO sub(2)/4H-SiC(0001) and (0001) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobili...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4)
Main Authors: Shiomi, Hiromu, Kitai, Hidenori, Tsujimura, Masatoshi, Kiuchi, Yuji, Nakata, Daisuke, Ono, Shuichi, Kojima, Kazutoshi, Fukuda, Kenji, Sakamoto, Kunihiro, Yamasaki, Kimiyohi, Okumura, Hajime
Format: Article
Language:English
Subjects:
Deviation
Electrical properties
Electron density
Nanostructure
Roughness
Silicon dioxide
Transmission electron microscopy
Wet oxidation
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Summary:The effects of oxynitridation and wet oxidation at the interface of SiO sub(2)/4H-SiC(0001) and (0001) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO sub(2)/4H-SiC(0001) and (0001).
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04ER19