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Synthesis and Bridgman Growth of Ga sub(2) S sub(3) Crystals

In this work, Ga sub(2) S sub(3) crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples...

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Bibliographic Details
Published in:Key Engineering Materials 2016-02, Vol.683, p.71-76
Main Authors: Kokh, Konstantin, Lapin, Ivan, Svetlichnyi, Valery, Galiyeva, Perizat, Bakhadur, Askar, Andreev, Yury
Format: Article
Language:English
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Summary:In this work, Ga sub(2) S sub(3) crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 mu m and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga sub(2) S sub(3) crystal among the most prospective crystals for nonlinear applications.
ISSN:1013-9826
1662-9795
DOI:10.4028/www.scientific.net/KEM.683.71