Effect of ZnO Seed Layer with Various Concentrations of Precursor on the Growth of ZnO Nanostructures

• Published in: Key Engineering Materials 2016, Vol.675-676, p.237-240
• Main Authors: Limsuwan, Pichet, Denchicharoen, Somyod, Siriphongsapak, Nontakoch
• Format: Article
• Language: English
• Subjects: Nanostructure; Precursors; Seeds; Silicon substrates; Thin films; Zinc; Zinc acetate; Zinc oxide
• ISSN: 1013-9826; 1662-9795; 1662-9795
• DOI: 10.4028/www.scientific.net/KEM.675-676.237

In this work, Zinc oxide (ZnO) thin films were deposited on silicon and glass substrates using spin-coating method with different concentrations of precursor (zinc acetate dihydrate) and stabilizer (monoethanolamine). The concentrations of zinc acetate dihydrate and monoethanolamine in isopropanol were varied from 6 mM to 500 mM. Subsequently, the substrate with ZnO thin film as a seed layer was used to grow ZnO nanostructures by hydrothermal process with the same concentration of precursor (zinc nitrate hexahydrate), temperature, and time for each growth. The samples were characterized by field-emission scanning electron microscopy (FESEM), X-rays diffractometer (XRD), and UV-visible spectrophotometer (UV-vis) to study morphology, crystallographic structure, and optical property, respectively. The results showed that particle size, crystallinity, and transmittance of seed layers were changed with increasing concentrations of spin-coated precursor. Furthermore, the nanostructures were found that higher precursor concentration of seed layers affected the formation of ZnO nanorods to be nanosheets.