Fabrication and Characterization of Antibacterial Tantalum Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Tantalum oxide (TaO) thin films were deposited by dc reactive magnetron sputtering at room temperature. A target of tantalum (99.995%) and a mixture of argon and oxygen gases were used to deposit TaO films on to silicon wafers (100) and BK7 glass substrate. The effects of annealing temperature (300–...

Full description

Saved in:
Bibliographic Details
Published in:Key Engineering Materials 2016, Vol.675-676, p.185-188
Main Authors: Chananonnawathorn, Chanunthorn, Eiamchai, Pitak, Mungchamnankit, Araya, Thongmee, Acharawan, Sukplang, Patamaporn, Patthanasettakul, V., Horprathum, Mati
Format: Article
Language:English
Subjects:
Annealing
Antiinfectives and antibacterials
Deposition
Magnetron sputtering
Morphology
Silicon substrates
Tantalum oxides
Thin films
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Tantalum oxide (TaO) thin films were deposited by dc reactive magnetron sputtering at room temperature. A target of tantalum (99.995%) and a mixture of argon and oxygen gases were used to deposit TaO films on to silicon wafers (100) and BK7 glass substrate. The effects of annealing temperature (300–700 °C) on structural, morphology and anti-bacterial properties were investigated. Grazing incident X-ray diffraction (GIXRD), atomic force microscope (AFM) measurements are carried out to identify the crystalline structure, film morphology and surface roughness, respectively. The antibacterial behavior of the tantalum oxide thin films will be discussed in this paper.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.675-676.185