Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique

• Published in: Journal of materials science. Materials in electronics 2016-05, Vol.27 (5), p.5089-5098
• Main Authors: Turgut, G., Duman, S., Ozcelik, F. S., Gurbulak, B., Doğan, S.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Contact resistance; Gold; Materials Science; Metallizing; Nanostructure; Optical and Electronic Materials; Sol gel process; Thin films; Wurtzite; Zinc oxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-016-4399-3

Pure and lutetium (Lu) incorporated zinc oxide (ZnO) thin films were deposited by a sol–gel route. The effect of Lu contribution on the properties of ZnO was examined in detail by means of XRD, AFM, SEM, UV–Vis spectrophotometer, and I–V measurements. The nano-sized ZnO:Lu samples had hexagonal wurtzite structure with c-axis (002) preferential orientation. The pure ZnO nano-particles homogeneously scattered on the film surface and this homogeneous particle distribution was deteriorated with Lu incorporation. Ohmic contacts to the ZnO:Lu films were formed using gold (Au) metallization schemes. As-deposited Au contacts exhibited linear current–voltage characteristics. The optical band gap for pure ZnO went up from 3.281 to 3.303 eV with low Lu contribution level up to 3 at.%, then it decreased with more Lu level. The Urbach energy was also studied and it was found that E u depended on Lu incorporation level.