A driving pulse edge modulation technique and its complex programming logic devices implementation

With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the p...

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Bibliographic Details
Published in:Frontiers of information technology & electronic engineering 2015-12, Vol.16 (12), p.1088-1098
Main Authors: Chen, Xiao, Qu, Dong-chang, Guo, Yong, Chen, Guo-zhu
Format: Article
Language:English
Subjects:
Circuits
Communications Engineering
Computer Hardware
Computer Science
Computer Systems Organization and Communication Networks
Electric potential
Electrical Engineering
Electronics and Microelectronics
Instrumentation
Insulated gate bipolar transistors
Modulation
Networks
Programmable logic devices
Semiconductor devices
Semiconductors
Spikes
Switching
Voltage
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Summary:With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the pulse trains, without regulating the hardware circuit, the slope of the gate driving voltage is controlled to change the switching speed. This technique is used in the driving circuit based on complex programmable logic devices （CPLDs）, and the switching voltage spike of IGBTs can be restrained through software, which is easier and more flexible to adjust. Experimental results demonstrate the effectiveness and practicability of the proposed method.
ISSN:2095-9184
2095-9230
DOI:10.1631/FITEE.1500111