A facile inexpensive route for SnS thin film solar cells with SnS2 buffer

PYS spectra of SnS/SnS2 interface and the related band diagram. [Display omitted] •A low cost SnS solar cell is developed using chemical bath deposition.•We found EI & χ of SnS (5.3eV & 4.0eV) and SnS2 (6.9eV & 4.1eV) films from PYS.•Band offsets of 0.1eV (Ec) and 1.6eV (Ev) are estimate...

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Bibliographic Details
Published in:Applied surface science 2016-05, Vol.372, p.116-124
Main Authors: Gedi, Sreedevi, Minnam Reddy, Vasudeva Reddy, Pejjai, Babu, Jeon, Chan-Wook, Park, Chinho, K.T., Ramakrishna Reddy
Format: Article
Language:English
Subjects:
Conduction band
Current density-voltage measurements
Deposition
Energy gaps (solid state)
Heterojunction solar cell
Ionization
Open circuit voltage
Photoemission yield spectroscopy
Photovoltaic cells
Quantum efficiency
Solar cells
Thin films
Tin sulfide films
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Summary:PYS spectra of SnS/SnS2 interface and the related band diagram. [Display omitted] •A low cost SnS solar cell is developed using chemical bath deposition.•We found EI & χ of SnS (5.3eV & 4.0eV) and SnS2 (6.9eV & 4.1eV) films from PYS.•Band offsets of 0.1eV (Ec) and 1.6eV (Ev) are estimated for SnS/SnS2 junction.•SnS based solar cell showed a conversion efficiency of 0.51%. Environment-friendly SnS based thin film solar cells with SnS2 as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS2 films were polycrystalline; (111)/(001) peaks as the preferred orientation; 1.3eV/2.8eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS2 films for the first time. These values obtained as 5.3eV and 4.0eV for SnS films; 6.9eV and 4.1eV for SnS2 films. The band alignment of SnS/SnS2 junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1eV and 1.6eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (Voc) of 0.12V, short circuit current density (Jsc) of 10.87mAcm−2, fill factor (FF) of 39% and conversion efficiency of 0.51%.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2016.03.032