MeV-SIMS yield measurements using a Si-PIN diode as a primary ion current counter

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2016-03, Vol.371, p.194-198
• Main Authors: Stoytschew, Valentin, Bogdanović Radović, Iva, Demarche, Julien, Jakšić, Milko, Matjačić, Lidija, Siketić, Zdravko, Webb, Roger
• Format: Article
• Language: English
• Subjects: Analytical techniques; Construction; Current; Diodes; Electronic stopping; Ion beams; Ion currents; Measurement methods; MeV SIMS; Molecular analysis; Silicon; Speciation; Yield
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2015.11.020

Megaelectronvolt-Secondary Ion Mass Spectrometry (MeV-SIMS) is an emerging Ion Beam Analysis technique for molecular speciation and submicron imaging. Various setups have been constructed in the recent years. Still a systematic investigation on the dependence of MeV-SIMS yields on different ion beam parameters is missing. A reliable measurement method of the beam current down to the attoampere range is needed for this investigation. Therefore, a new detector has been added to the MeV-SIMS setup at the Ruđer Bošković Institute (RBI), which measures the current directly using a Si PIN-diode. In this work, we present the constructed system, its characteristics, and results of the first yield measurements. These measurements have already identified important factors that have to be considered while constructing a MeV SIMS setup.