Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature

The channel process to further improve the performance of bottom gate hafnium-doped zinc oxide (HZO) thin-film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The results show that the extracted saturation mobility increases fi...

Full description

Saved in:
Bibliographic Details
Published in:Electronics letters 2015-05, Vol.51 (11), p.867-869
Main Authors: Wu, J, Han, D.D, Cong, Y.Y, Zhao, N.N, Chen, Z.F, Dong, J.C, Zhao, F.L, Zhang, S.D, Liu, L.F, Zhang, X, Wang, Y
Format: Article
Language:English
Subjects:
bottom gate hafnium‐doped zinc oxide
channel length thickness effect
Channels
Film thickness
Gates
hafnium
HZO‐TFT
II‐VI semiconductors
Optimization
Saturation
saturation mobility extraction
Semiconductor devices
Semiconductor technology
Thin film transistors
thin‐film transistor
wide band gap semiconductors
zinc compounds
Zinc oxide
ZnO:Hf
Citations: Items that this one cites
Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The channel process to further improve the performance of bottom gate hafnium-doped zinc oxide (HZO) thin-film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The results show that the extracted saturation mobility increases first and then decreases with the increase of HZO film thickness, reaching maximum when the channel thickness is optimum. The dependence of the optimum thickness on channel length is studied and it is found that optimum thickness increases with the increase of channel length.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2015.0362