InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells

Lattice-matched lnGaAs（P） photovoltaic devices were grown on lnP substrates by metal-organic chem- ical vapor deposition. InGaAsP/InGaAs （ 1.07/0.74 eV） dual-junction （D J） solar cells were fabricated and charac- terized by quantum efficiency and I-V measurements. The open circuit voltage, short cir...

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Bibliographic Details
Published in:Journal of semiconductors 2015-04, Vol.36 (4), p.86-89
Main Author: 赵勇明 董建荣 李奎龙 孙玉润 曾徐路 何洋 于淑珍 杨辉
Format: Article
Language:English
Subjects:
Conversion
GaInP
Illumination
InGaAsP
Open circuit voltage
Photovoltaic cells
Semiconductors
Solar cells
Sun
Volt-ampere characteristics
串联
光伏器件
太阳能电池
有机金属
短路电流密度
铟镓砷
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Summary:Lattice-matched lnGaAs（P） photovoltaic devices were grown on lnP substrates by metal-organic chem- ical vapor deposition. InGaAsP/InGaAs （ 1.07/0.74 eV） dual-junction （D J） solar cells were fabricated and charac- terized by quantum efficiency and I-V measurements. The open circuit voltage, short circuit current density, fill factor, and efficiency of lnGaAsP/lnGaAs DJ solar cell are 0.977 V, 10.2 mA/cm2, 80.8%, and 8.94%, respectively, under one sun illumination of the AM 1.5D spectrum. For the lnGaAsP/lnGaAs DJ solar cell, with increasing con- centration, the conversion efficiency first increases steadily and reaches 13% around 280 suns, and finally decreases due to the drop in fill factor at higher concentration ratios. These experimental results demonstrate the promising prospect of GaInP/GaAs/lnGaAsP/lnGaAs four-junction solar cells.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/4/044011