Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode‐assisted mechanism. An extremely large MR (>104%) at low magnetic fields (1 mT) is o...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-04, Vol.28 (14), p.2760-2764
Main Authors: Luo, Zhaochu, Xiong, Chengyue, Zhang, Xu, Guo, Zhen-Gang, Cai, Jianwang, Zhang, Xiaozhong
Format: Article
Language:English
Subjects:
Coupling
electron transport
Hall effect
Magnetic fields
magnetic materials
Magnetoresistance
Magnetoresistivity
nonlinear properties
Nonlinearity
Semiconductor materials
Transport
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Summary:The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode‐assisted mechanism. An extremely large MR (>104%) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504023