Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin‐film ferroelectric field‐effect transistors. An optical memory effect is also observed with large modulation o...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-04, Vol.28 (15), p.2923-2930
Main Authors: Ko, Changhyun, Lee, Yeonbae, Chen, Yabin, Suh, Joonki, Fu, Deyi, Suslu, Aslihan, Lee, Sangwook, Clarkson, James David, Choe, Hwan Sung, Tongay, Sefaatin, Ramesh, Ramamoorthy, Wu, Junqiao
Format: Article
Language:English
Subjects:
2D materials
Ferroelectric materials
Ferroelectricity
ferroelectrics
field-effect transistors
Gating and risering
Modulation
nonvolatile memory
Optical memory (data storage)
Optoelectronics
Semiconductors
Thin films
transition-metal dichalcogenides
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Summary:Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin‐film ferroelectric field‐effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504779