Illumination Effect on Bipolar Switching Properties of Gd:SiO sub(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO sub(2) thin films under the ultraviolet ( lambda =400 nm) and red-light ( l...

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Bibliographic Details
Published in:Nanoscale research letters 2016-12, Vol.11 (1), p.1-5
Main Authors: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M
Format: Article
Language:English
Subjects:
Devices
Electrodes
Illumination
Indium tin oxide
Nanostructure
Ohmic
Switching
Ultraviolet
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Summary:To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO sub(2) thin films under the ultraviolet ( lambda =400 nm) and red-light ( lambda =770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO sub(2) RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO sub(2) RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-016-1431-8