Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

• Published in: Journal of crystal growth 2016-04, Vol.439, p.87-92
• Main Authors: Yang, W.C., Lee, P.Y., Tseng, H.Y., Lin, C.W., Tseng, Y.T., Cheng, K.Y.
• Format: Article
• Language: English
• Subjects: A1. Hole concentration; A1. Mg doping; A3. Plasma-assisted molecular beam epitaxy; Activation; Crystal defects; Crystal growth; Electrical properties; Electrical resistivity; Flux; Gallium nitrides; GaN; Molecular beam epitaxy
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2016.01.011

The influence of growth conditions on the incorporation and activation of Mg in GaN grown by plasma-assisted molecular beam epitaxy at high growth temperature (>700°C) is presented. It is found that the highest Mg incorporation with optimized electrical properties is highly sensitive both to the Mg/Ga flux ratio and III/V flux ratio. A maximum Mg activation of ~5% can be achieved at a growth temperature of 750°C. The lowest resistivity achieved is 0.56Ω-cm which is associated with a high hole mobility of 6.42cm2/V-s and a moderately high hole concentration of 1.7×1018cm−3. Although the highest hole concentration achieved in a sample grown under a low III/V flux ratio and a high Mg/Ga flux ratio reaches 7.5×1018cm−3, the mobility is suffered due to the formation of defects by the excess Mg. In addition, we show that modulated beam growth methods do not enhance Mg incorporation at high growth temperature in contrast to those grown at a low temperature of 500°C (Appl. Phys. Lett. 93, 172112, Namkoong et al., 2008 [19]). •A thorough study of Mg doping conditions in GaN at high growth temperatures.•Maximum Mg activation of 5% is achieved at a growth temperature of 750°C.•Under the optimal growth condition, the lowest resistivity achieved is 0.56Ω-cm.