Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

• Published in: Journal of crystal growth 2016-02, Vol.435, p.105-109
• Main Authors: Pantzas, K., Rogers, D.J., Bove, P., Sandana, V.E., Teherani, F.H., El Gmili, Y., Molinari, M., Patriarche, G., Largeau, L., Mauguin, O., Suresh, S., Voss, P.L., Razeghi, M., Ougazzaden, A.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Zinc compounds; B3. Solar cells; Bonding; Etching; Gallium nitrides; Grazing incidence; Indium; Indium gallium nitrides; Substrates; Zinc oxide
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2015.11.007

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process. •MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.•In-depth structural characterizations showing no back-etching of ZnO.•Chemical lift-off and wafer-bonding of the structure on float glass.•Structural characterizations of the device on glass.