Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

• Published in: Journal of crystal growth 2016-03, Vol.438, p.49-54
• Main Authors: Aho, A., Korpijärvi, V.-M., Isoaho, R., Malinen, P., Tukiainen, A., Honkanen, M., Guina, M.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A3. Molecular beam epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III–V materials; Crystal growth; Crystals; Diffraction; Energy gap; Energy gaps (solid state); Fittings; Mathematical models; Photonic band gaps
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2015.12.026

We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GaInAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0–0.06, In composition from 0 to 0.17, and Sb composition in the range of 0–0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of ~20meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices. •Band gap dependence on composition for GaInNAsSb compounds•Composition determination method for GaInNAsSb using XRD and SEM-EDS•Band anti-crossing model for GaInNAsSb with 20meV band gap prediction accuracy•GaInNAsSb compostion determination accuracy of 0.0045 for group V atoms