Effects of annealing conditions on resistive switching characteristics of SnO sub(x) thin films

A resistive random-access memory based on an Al/SnO sub(x)/Pt structure is demonstrated. The SnO sub(x) thin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching char...

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Bibliographic Details
Published in:Journal of alloys and compounds 2016-07, Vol.673, p.54-59
Main Authors: Jina, Jidong, Zhanga, Jiawei, Kemala, Remzi E, Luoa, Yi, Baoa, Peng, Althobaitib, Mohammed, Hespb, David, Dhanakb, Vinod R, Zhengb, Zhaoliang, Mitrovicc, Ivona Z, Hallc, Steve, Songa, Aimin
Format: Article
Language:English
Subjects:
Alloys
Annealing
Data storage
Endurance
Memory devices
Stability
Switching
Thin films
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Summary:A resistive random-access memory based on an Al/SnO sub(x)/Pt structure is demonstrated. The SnO sub(x) thin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 degree C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 10 super(5) s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnO sub(x) films seem to be a promising candidate for nonvolatile memory applications.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2016.02.215