Secondary Ion Mass Spectrometry based depth profiling of Mo/Si interfaces with different microcrystalline structure

• Published in: Materials chemistry and physics 2016-04, Vol.173, p.475-481
• Main Authors: Singh, Ch. Kishan, Ilango, S., Dash, S., Tyagi, A.K.
• Format: Article
• Language: English
• Subjects: Deposition; Depth profiling; Diffraction; Diffusion; Interfaces; Microstructure; Secondary ion mass spectrometry; Secondary ion mass spectroscopy; Sputtering; Thin films
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2016.02.041

The issues pertaining to non-uniform sputtering from polycrystalline grains in metal thin films during Secondary Ion Mass Spectrometer depth profiling process are investigated. A case study on Mo thin films obtained through magnetron sputter deposition at different substrate temperatures and possessing different microstructural features is presented. X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectrometry and atomic force microscopy were used to elucidate and corroborate the experimental observations of diffusion like broadening observed in the SIMS profiles. While the interfacial diffusion is ruled out based on the inferences derived from complementary experimental investigations, the observed broadening could be attributed to the influence of microstructural features on the sputtering process. •Polycrystalline Mo films with different Mo microstructure were sputter deposited on Si substrates at different temperatures.•Investigation on parameters influencing the interfacial characterization of polycrystalline-Mo/Si film interfaces.•The diffusion aspect and the microstructural influence are addressed.•The broadening in SIMS depth profiles across the interface are correlated with the microstructure.