Ultralarge Magneto-Electroluminescence in Exciplex-Based Devices Driven by Field-Induced Reverse Intersystem Crossing

Ultralarge magneto‐electroluminescence (MEL) as high as ≈160% is achieved in donor–acceptor blend exciplex‐based organic light‐emitting diodes at room temperature. Such large MEL is crucially determined by the activation energy in the exciplex manifold. It is caused by the field‐induced reverse inte...

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Bibliographic Details
Published in:Advanced optical materials 2016-05, Vol.4 (5), p.694-699
Main Authors: Lei, Yanlian, Zhang, Qiaoming, Chen, Lixiang, Ling, Yongzhou, Chen, Ping, Song, Qunliang, Xiong, Zuhong
Format: Article
Language:English
Subjects:
Activation energy
Blends
Devices
Diodes
Electroluminescence
exciplex
magneto-electroluminescence
Manifolds
Materials science
Optical materials
Optics
Organic light emitting diodes
reverse intersystem-crossing
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Summary:Ultralarge magneto‐electroluminescence (MEL) as high as ≈160% is achieved in donor–acceptor blend exciplex‐based organic light‐emitting diodes at room temperature. Such large MEL is crucially determined by the activation energy in the exciplex manifold. It is caused by the field‐induced reverse intersystem crossing in the exciplexes, which is driven by a Δg spin‐mixing mechanism.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.201600015