Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC

Al2O3 was deposited on n-type 4H-SiC by reactive-ion-sputtering (RIS) at room temperature using aluminum target and oxygen as a reactant gas. Post deposition oxygen annealing was carried out at a temperature of 1100°C. Metal-oxide-semiconductor (MOS) test structures were fabricated on 4H-SiC using R...

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Bibliographic Details
Published in:Thin solid films 2016-05, Vol.607, p.1-6
Main Authors: Shukla, Madhup, Dutta, Gourab, Mannam, Ramanjaneyulu, DasGupta, Nandita
Format: Article
Language:English
Subjects:
4H-SiC
Aluminum oxide
Annealing
Forming gas annealing
Fowler–Nordheim tunneling
Gates
Metal-oxide-semiconductor capacitor
MOS devices
Oxygen
Oxygen annealing
Poole-Frenkel tunneling
Reactive-ion sputtering
Reduction
Tunneling
Volt-ampere characteristics
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Summary:Al2O3 was deposited on n-type 4H-SiC by reactive-ion-sputtering (RIS) at room temperature using aluminum target and oxygen as a reactant gas. Post deposition oxygen annealing was carried out at a temperature of 1100°C. Metal-oxide-semiconductor (MOS) test structures were fabricated on 4H-SiC using RIS-Al2O3 as gate dielectric. The C-V characteristics reveal a significant reduction in flat band voltage for oxygen annealed RIS-Al2O3 samples (Vfb=1.95V) compared to as-deposited Al2O3 samples (Vfb>10V), suggesting a reduction in negative oxide charge after oxygen annealing. Oxygen annealed RIS-Al2O3 samples also showed significant improvement in I-V characteristics compared to as-deposited RIS-Al2O3 samples. A systematic analysis was carried out to investigate the leakage current mechanisms present in oxygen annealed RIS-Al2O3 on 4H-SiC at higher gate electric field and at different operating temperature. For measurement temperature (T)
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.03.060